DIODES Incorporated FET, MOSFET Arrays DMT3009LDT-7

Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 30A 1.2W Surface Mount V-DFN3030-8 (Type K)

Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 30A 1.2W Surface Mount V-DFN3030-8 (Type K)

Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 30A 1.2W Surface Mount V-DFN3030-8 (Type K)

MOSFET 2N-CH 30V 30A V-DFN3030-8

Manufacturer: Diodes Incorporated
Win Source Part Number: 803644-DMT3009LDT-7
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W
Supplier Device Package: V-DFN3030-8 (Type K)
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-VDFN Exposed Pad
Popularity: Medium
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 11.1mOhm at 14.4A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 20nC at 15V
Input Capacitance (Ciss) (Maximum) at Vds: 1500pF at 15V
Current - Continuous Drain (Id) at 25°C: 30A
Vgs(th) (Maximum) at Id: 3V at 250μA

MOSFET 2N-CH 30V 30A 8VDFN Product overview: DMT3009LDT-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMT3009LDT-7 can be used for catalog matching and distributor lookup.