MOSFET 2N-CH 30V 30A V-DFN3030-8
MOSFET 2N-CH 30V 30A 8VDFN Product overview: DMT3009LDT-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMT3009LDT-7 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 30A 1.2W Surface Mount V-DFN3030-8 (Type K)
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 30A 1.2W Surface Mount V-DFN3030-8 (Type K)
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 30A 1.2W Surface Mount V-DFN3030-8 (Type K)
Manufacturer: Diodes Incorporated
Win Source Part Number: 803644-DMT3009LDT-7
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W
Supplier Device Package: V-DFN3030-8 (Type K)
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-VDFN Exposed Pad
Popularity: Medium
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 11.1mOhm at 14.4A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 20nC at 15V
Input Capacitance (Ciss) (Maximum) at Vds: 1500pF at 15V
Current - Continuous Drain (Id) at 25°C: 30A
Vgs(th) (Maximum) at Id: 3V at 250μA
MOSFET, DUAL, N-CH, 30V, 30A ROHS COMPLIANT: YES
30V 30A 11.1mΩ@10V,14.4A 1.2W 3V@250uA 2 N-Channel(Half Bridge) V-DFN3030-8K MOSFETs ROHS
MOSFET 2N-CH 30V 30A 8VDFN
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMT3009LDT-7 | 289-DMT3009LDT-7 | DMT3009LDT-7DIDKR-ND | 803644-DMT3009LDT-7 | 28AK8863 | DMT3009LDT-7 | DMT3009LDT-7 | DMT3009LDT-7 |
| Product Name | FET, MOSFET Arrays | 30V 30A MOSFET Transistor | FET, MOSFET Arrays | FETs - Arrays - DMT3009LDT-7 | Mosfet, Dual, N-Ch, 30V, 30A Rohs Compliant Diodes Inc. | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) Asymmetrical | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| IDSS | 30000 milliamps | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
