DIODES Incorporated Single FETs, MOSFETs DMT12H060LFDF-13

The DMT12H060LFDF is a 115V N-channel enhancement mode MOSFET designed for high-efficiency power management in battery-operated systems and solid-state relays. It is housed in a U-DFN2020-6 package with a 4mm² PCB footprint and a 0.6mm profile, making it suitable for low-profile applications. The device features a maximum on-resistance of 70mΩ at VGS = 2.5V and 65mΩ at VGS = 4.5V, with continuous drain current ratings of 4.4A at +25°C and 3.6A at +70°C. It is ESD protected, 100% UIS tested, and meets AEC-Q100/101/200 qualifications for automotive use. The package is molded plastic with UL 94 V-0 flammability rating, RoHS compliant, and has a thermal resistance from junction to ambient of 110°C/W on a standard PCB. Operating and storage junction temperature ranges from -55°C to +150°C.