DIODES Incorporated Single FETs, MOSFETs DMT10H4M5LPSW-13

Description
MOSFET BVDSS: 61V~100V POWERDI50
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Description
MOSFET BVDSS: 61V~100V POWERDI50
Request a Quote
Datasheet
Datasheet Summary
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DMT10H4M5LPSW-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI®5060-8 package, designed for motor control, DC-DC conversion, and power management applications. It has a maximum continuous drain current of 100A at TC = +25°C and an on-resistance of 4.3mΩ at VGS = 10V. The device features an avalanche energy rating of 240mJ, a gate charge of 80nC, and supports 100% unclamped inductive switching testing. It operates from -55°C to +150°C, has a thermal resistance of 1.1°C/W from junction to case, and is RoHS compliant with a UL 94 V-0 flammability rating. The case is molded plastic with a matte tin annealed finish on a copper leadframe, rated at Moisture Sensitivity Level 1 per J-STD-020.

Datasheet Summary
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DMT10H4M5LPSW-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI®5060-8 package, designed for motor control, DC-DC conversion, and power management applications. It has a maximum continuous drain current of 100A at TC = +25°C and an on-resistance of 4.3mΩ at VGS = 10V. The device features an avalanche energy rating of 240mJ, a gate charge of 80nC, and supports 100% unclamped inductive switching testing. It operates from -55°C to +150°C, has a thermal resistance of 1.1°C/W from junction to case, and is RoHS compliant with a UL 94 V-0 flammability rating. The case is molded plastic with a matte tin annealed finish on a copper leadframe, rated at Moisture Sensitivity Level 1 per J-STD-020.

Suppliers

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Single FETs, MOSFETs - 31-DMT10H4M5LPSW-13TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMT10H4M5LPSW-13TR-ND
Single FETs, MOSFETs 31-DMT10H4M5LPSW-13TR-ND
MOSFET BVDSS: 61V~100V POWERDI50

MOSFET BVDSS: 61V~100V POWERDI50

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 31-DMT10H4M5LPSW-13TR-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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