DIODES Incorporated 100V 4A MOSFET Transistor DMT10H072LFDFQ-7

MOSFET N-CH 100V 4A 6UDFN Product overview: DMT10H072LFDFQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT10H072LFDFQ-7 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1376899-DMT10H072LFDFQ-7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type F)
Base Product Number: DMT10
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Power Dissipation (Max): 1.8W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

N-Channel 100V 4A (Ta) 1.8W (Ta) Surface Mount U-DFN2020-6 (Type F)

N-Channel 100V 4A (Ta) 1.8W (Ta) Surface Mount U-DFN2020-6 (Type F)

N-Channel 100V 4A (Ta) 1.8W (Ta) Surface Mount U-DFN2020-6 (Type F)