DIODES Incorporated FET, MOSFET Arrays DMT10H072LDV-13

The DMT10H072LDV-13 is a dual 100V N-channel enhancement mode MOSFET in a PowerDI3333-8 package, designed for high-efficiency power-management applications. It has a maximum continuous drain current of 12A at 25°C with a gate-source voltage of 10V, and a drain-source on-resistance of 66mΩ at VGS=10V. The device features low input and output capacitance, fast switching speed, and is qualified for automotive applications under AEC-Q100/101/104/200. It is lead-free, RoHS compliant, and meets UL 94 V-0 flammability standards with a moisture sensitivity level of 1 per J-STD-020. The part is supplied in a 3,000-piece tape and reel packaging.