DIODES Incorporated Single FETs, MOSFETs DMT10H032LK3-13

The DMT10H032LK3-13 is a 100V N-channel enhancement mode MOSFET in a TO252 (DPAK) package, designed for high-efficiency power management applications such as DC-DC converters and backlighting. It features a maximum continuous drain current of 26A at 25°C and a on-resistance of 32mΩ at VGS = 10V, minimizing power losses. The device supports 100% unclamped inductive switching testing, ensuring robustness, and has a low gate charge of 11.9nC at 10V to reduce switching losses. It is RoHS compliant, halogen- and antimony-free, and rated for operation from -55°C to +150°C. The part is qualified for automotive applications under AEC-Q100/101/200 and manufactured in IATF 16949 certified facilities. Packaging is tape and reel with 2,500 units per carrier. Thermal resistance junction-to-ambient is 40°C/W with a 1-inch square copper plate. Moisture sensitivity level is 3 per J-STD-020, and the package material meets UL 94 V-0 flammability rating.