MOSFET P-CH 40V 55A TO252 T&R
P-Channel 40V 55A (Tc) 2.1W (Ta) Surface Mount TO-252, (D-Pak)
MOSFET P-CH 40V 55A TO252 T&R
MOSFET P-CH 40V 55A TO252 T&R
MOSFET P-CH 40V 55A TO252 T&R Product overview: DMPH4013SK3Q-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 55A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 55A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMPH4013SK3Q-13 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1055800-DMPH4013SK3Q
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): DMPH4013SK3Q-13DMPH4
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Base Product Number: DMPH4013
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET P-CH 40V 55A TO252 T&R
MOSFET MOSFET BVDSS: 31V~40V TO252 T&R 2.5K
MOSFET, P-CH, 40V, 55A, TO-252 ROHS COMPLIANT: YES
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMPH4013SK3Q-13 | 31-DMPH4013SK3Q-13TR-ND | 278-DMPH4013SK3Q-13 | 1055800-DMPH4013SK3Q-13 | DMPH4013SK3Q-13 | DMPH4013SK3Q-13 | 28AK8659 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 40V 55A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 40V, 55A, To-252 Rohs Compliant Diodes Inc. |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| IDSS | 55000 milliamps | ||||||
| PD | 2100 milliwatts | 3.7 milliwatts | 2100 milliwatts |