DIODES Incorporated Single FETs, MOSFETs DMNH6010SCTBQ-13

The DMNH6010SCTBQ is a 60V N-channel enhancement mode MOSFET in a TO263AB (D2PAK) package, designed for automotive applications requiring high reliability and operation up to 175°C. It features a maximum on-resistance of 10mΩ at 10V gate-source voltage and a continuous drain current of 133A at 25°C case temperature. The device is qualified to AEC-Q101, certified under IATF 16949, and supports PPAP documentation. It includes 100% unclamped inductive switching (UIS) testing, low gate charge of 46nC, and thermal resistance of 0.4°C/W junction-to-case. The package is molded plastic with UL 94 V-0 flammability rating, moisture sensitivity level 1, and is RoHS compliant, halogen- and antimony-free. Weight is approximately 1.7 grams.