MOSFET 2N-CH 30V 0.22A SOT363 Product overview: DMN63D8LDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.22A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN63D8LDW-7 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 30V 220mA 300mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 30V 220mA 300mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 30V 220mA 300mW Surface Mount SOT-363
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033800-DMN63D8LDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMN63D8LDW
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 220mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 870nC @ 10V
Max Input Capacitance: 22pF @ 25V
Maximum Rds On at Id,Vgs: 2.8 Ohm @ 250mA, 10V
Alternative Parts (Cross-Reference): SSM6N15FU; SSM6N48FU,LF(T; SSM6N15FU(T5R,F,T); SSM6N15FU(TE85L,F);
Introduction Date: November 05, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 0.22A SOT363
MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:260mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; RoHS Compliant: Yes
30V 220mA 300mW 2.8Ω@10V,250mA 1.5V@250uA 2 N-Channel SOT-363 MOSFETs ROHS
MOSFET 2N-CH 30V 0.22A SOT363
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-DMN63D8LDW-7 | DMN63D8LDW-7DKR-ND | 1033800-DMN63D8LDW-7 | DMN63D8LDW-7 | DMN63D8LDW-7 | 82Y6580 | DMN63D8LDW-7 | DMN63D8LDW-7 |
| Product Name | 30V 0.22A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN63D8LDW-7 | FET, MOSFET Arrays | MOSFET | Mosfet, Aec-Q101, Dual N-Ch, 30V, Sot363; Transistor Polarity Diodes Inc. | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| Transconductance | 8.00E-5 kS | |||||||
| PD | 400 milliwatts | 300 milliwatts | 300 milliwatts |
