DIODES Incorporated Single FETs, MOSFETs DMN3732UFB4-7

The DMN3732UFB4 is a 30V N-channel enhancement mode MOSFET in an X2-DFN1006-3 package, measuring 1.0mm x 0.6mm, designed for high-efficiency power management in portable and automotive applications. It features a low on-resistance of 460mΩ at 4.5V gate drive and 560mΩ at 2.5V, enabling direct battery drive. The device has an ultra-low profile of 0.4mm, ESD-protected gate, and is RoHS compliant with a UL 94 V-0 approved mold compound. It meets AEC-Q100/101/104/200 standards and is manufactured in IATF 16949 certified facilities. Thermal resistance is 112°C/W under recommended PCB layout. The part is moisture sensitive level 1 per J-STD-020 with NiPdAu terminated terminations.