DIODES Incorporated Single FETs, MOSFETs DMN34D0UQ-13

The DMN34D0UQ is an N-channel enhancement mode MOSFET for high-efficiency power management in DC-DC converters and battery-operated systems. It is packaged in an SOT23 surface-mount case with UL 94V-0 flammability rating and moisture sensitivity level 1 per J-STD-020. The device has a 25 V drain-source breakdown voltage, a continuous drain current of 0.23 A at 70°C and 0.3 A at 25°C, and an on-resistance of 4 Ω at VGS = 4.5V and 0.4 A, or 5 Ω at VGS = 2.7V and 0.2 A. It includes an ESD-protected gate and is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. Total power dissipation is 0.56 W with a thermal resistance of 222 °C/W. The junction temperature range is -55°C to +150°C. The part is RoHS compliant and halogen- and antimony-free.