DIODES Incorporated Single FETs, MOSFETs DMN3029LFG-7

MOSFET N-CH 30V 5.3A PWRDI3333-8

N-Channel 30V 5.3A (Ta) 1W (Ta) Surface Mount PowerDI3333-8

MOSFET N-CH 30V 5.3A PWRDI3333-8

Manufacturer: Diodes Incorporated
Win Source Part Number: 105247-DMN3029LFG-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI3333-8
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.3A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 11.3nC @ 10V
Max Input Capacitance: 580pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 18.6 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

MOSFET N-CH 30V 5.3A PWRDI333-8 Product overview: DMN3029LFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3029LFG-7 can be used for catalog matching and distributor lookup.