DIODES Incorporated 30V 6.6A MOSFET Transistor DMN3026LVT-7

MOSFET N-CH 30V 6.6A TSOT26 Product overview: DMN3026LVT-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3026LVT-7 can be used for catalog matching and distributor lookup.

N-Channel 30V 6.6A (Ta) 1.2W (Ta) Surface Mount TSOT-23-6

N-Channel 30V 6.6A (Ta) 1.2W (Ta) Surface Mount TSOT-23-6

N-Channel 30V 6.6A (Ta) 1.2W (Ta) Surface Mount TSOT-23-6

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033750-DMN3026LVT-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TSOT-26
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.6A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 12.5nC @ 10V
Max Input Capacitance: 643pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23 mOhm @ 6.5A, 10V
Alternative Parts (Cross-Reference): FDC8886; STT6N3LLH6; DMN3026LVT-13;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

MOSFET N-CH 30V 6.6A TSOT26