Infineon Technologies AG Automotive MOSFET AUIRF2804S

Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

Benefits

• Advanced process technology
• Ultra-low on-resistance
• 175°C operating temperature
• Fast switching
• Repetitive avalanche allowed up to Tjmax
• Lead free, RoHS compliant
• Automotive qualified

Potential Applications

• Brushless Motor Drive
• Electric Power Steering
• Relay Replacement

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MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms

N-Channel 40V 195A (Tc) 300W (Tc) Surface Mount D2PAK

AUIRF2804 - 20V-40V N-CHANNEL AU

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 270 A
Maximum Drain Source Voltage = 40 V
Maximum Drain Source Resistance = 2 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Pin Count = 3

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 270 A
Maximum Drain Source Voltage = 40 V
Maximum Drain Source Resistance = 2 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Pin Count = 3
Delivery on production packaging - Tube. This product is non-returnable.

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 270 A
Maximum Drain Source Voltage = 40 V
Maximum Drain Source Resistance = 2 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Transistor Configuration = Single

MOSFET N-CH 40V 195A D2PAK

Manufacturer: Infineon Technologies
Win Source Part Number: 1020703-AUIRF2804S
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 195A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 240nC @ 10V
Max Input Capacitance: 6450pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance