The DMN2991UVQ is a dual N-channel enhancement mode MOSFET in an SOT563 package, designed for high-efficiency power management in battery-operated systems and automotive applications. It features a drain-source voltage rating of 20 V, with on-resistance of 0.99 Ω at VGS = 4.5 V and 1.2 Ω at VGS = 2.5 V, and a gate threshold voltage below 1 V. The device is AEC-Q101 qualified, PPAP capable, manufactured in IATF16949-certified facilities, and meets RoHS, Halogen-free, and Green standards. It has an approximate weight of 0.006 grams and is supplied in tape and reel packaging with 3,000 units per reel for the DMN2991UVQ-7 variant. Thermal resistance is 160 °C/W with optimal PCB layout, and junction temperature operates from -55 °C to +150 °C.
MOSFET BVDSS: 8V~24V SOT563 T&R
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 31-DMN2991UVQ-7TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | SOT-563, SOT-666 |
