The DMN2991UVQ-13 is a dual N-channel enhancement mode MOSFET in an SOT563 surface-mount package, measuring 1.60 mm x 1.60 mm x 0.60 mm, designed for high-efficiency power management in battery-operated systems and automotive applications. It features a drain-source voltage rating of 20 V, low on-resistance of 0.99 Ω at VGS = 4.5 V, and a gate threshold voltage below 1 V. The device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949-certified facilities. It complies with RoHS 3 and is halogen- and antimony-free. Packaged in a tape and reel configuration with 10,000 units per reel.
MOSFET BVDSS: 8V~24V SOT563 T&R
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 31-DMN2991UVQ-13TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | SOT-563, SOT-666 |
