Dual N-channel enhancement mode MOSFET in SOT363 package designed for high-efficiency power management in battery-operated systems and solid-state relays. Each channel supports a maximum continuous drain current of 0.8A at 25°C with a drain-source voltage rating of 20V. On-resistance is 0.45Ω at VGS=4.5V and 0.6Ω at VGS=2.5V. Features low gate threshold voltage, fast switching, and ESD protection. Complies with AEC-Q101 for automotive applications, is RoHS compliant, and rated for operation from -55°C to +150°C. Mounts on standard PCB with 2oz copper and minimum recommended pad layout. Weight is approximately 0.006 grams.
MOSFET 2N-CH 20V 0.8A SOT363
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 31-DMN2710UDWQ-7TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | 6-TSSOP, SC-88, SOT-363 |
