MOSFET N-CH 20V 2A SOT23 Product overview: DMN2230UQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2230UQ-7 can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 2A SOT23
Manufacturer: Diodes Incorporated
Win Source Part Number: 772788-DMN2230UQ-7
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-236-3, SC-59, SOT-23-3
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Family Name: DMN2230UQ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Manufacturer Package: SOT-23
Channel Type Type: N
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 2.3nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 188pF @ 10V
Vgs (Maximum): ±12V
Power Dissipation (Maximum): 600mW (Ta)
Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V
Alternative Parts (Cross-Reference): RUR020N02TL; SI2302DDS-T1-GE3; TSM2302CX RFG; TSM2302CX;
Introduction Date: June 15, 2015
ECCN: EAR99
Estimated EOL Date: 2030
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
N-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount SOT-23-3
N-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount SOT-23-3
N-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount SOT-23-3
MOSFET 20V N-Ch Enh FET 20Vdss 2.0A 7A 600mW
MOSFET N-CH 20V 2A SOT23
MOSFET, N-CH, 20V, 2A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.081ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN2230UQ-7 | DMN2230UQ-7 | 772788-DMN2230UQ-7 | DMN2230UQ-7DIDKR-ND | DMN2230UQ-7 | DMN2230UQ-7 | 07AH3763 |
| Product Name | 20V 2A SOT23 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2230UQ-7 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, 2A, Sot23; Transistor Polarity Diodes Inc. |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 600 milliwatts | 600 milliwatts | 600 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
