MOSFET N-CH 20V 7.9A 6UDFN Product overview: DMN2022UFDF-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN2022UFDF-7 can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 7.9A 6UDFN
Win Source Part Number: 998219-DMN2022UFDF-7
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type F)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Other Names: DMN2022UFDF-7DICT,DM
Base Product Number: DMN2022
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)
N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)
N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)
MOSFET N-CH 20V 7.9A 6UDFN
MOSFET, N-CH, 20V, 7.9A, U-DFN2020 ROHS COMPLIANT: YES
MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN2022UFDF-7 | DMN2022UFDF-7 | 998219-DMN2022UFDF-7 | DMN2022UFDF-7DICT-ND | DMN2022UFDF-7 | 36AJ3580 | DMN2022UFDF-7 |
| Product Name | 20V 7.9A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, 7.9A, U-Dfn2020 Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 2.03 milliwatts | 660 milliwatts | 660 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | Tape & Reel (TR) | 6-UDFN Exposed Pad | SOT3 | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | TO-3 |
