DIODES Incorporated Single FETs, MOSFETs DMN2002UFG-13

DMN2002UFG-13 is a 20V N-channel enhancement mode MOSFET in a PowerDI3333-8 package, designed for high-efficiency power-management applications. The device features a low on-state resistance of 1.4mΩ at VGS=10V, 1.7mΩ at VGS=4.5V, and 2.4mΩ at VGS=2.5V, with a continuous drain current of up to 180A at TC=+25°C. It supports 100% UIS testing for reliability and is packaged in a thermally efficient, space-saving format occupying 33% less board area than an SO-8. The package uses a "Green" molding compound with UL 94 V-0 flammability rating, is lead-free and RoHS compliant, and meets AEC-Q200 qualifications for automotive applications. Thermal resistance junction-to-ambient is 56°C/W on a 2oz copper 1-inch square pad. The device is supplied in 3,000-piece tape and reel packaging.