Manufacturer: Diodes Incorporated
Win Source Part Number: 1033715-DMN10H220LE-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 2.3A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 8.3nC @ 10V
Max Input Capacitance: 401pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 220 mOhm @ 1.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 100V 2.3A SOT223
MOSFET N-CH 100V 2.3A SOT223 Product overview: DMN10H220LE-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 2.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN10H220LE-13 can be used for catalog matching and distributor lookup.
N-Channel 100V 2.3A (Ta) 1.8W (Ta) Surface Mount SOT-223-3
N-Channel 100V 2.3A (Ta) 1.8W (Ta) Surface Mount SOT-223-3
N-Channel 100V 2.3A (Ta) 1.8W (Ta) Surface Mount SOT-223-3
MOSFET N-CH 100V 2.3A SOT223
MOSFET, N-CH, 100V, 6.2A, SOT-223 ROHS COMPLIANT: YES
MOSFET FET BVDSS 61V 100V N-Ch 3A 401pF 8.3nC
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1033715-DMN10H220LE-13 | DMN10H220LE-13 | 278-DMN10H220LE-13 | DMN10H220LE-13DIDKR-ND | DMN10H220LE-13 | 28AK8464 | DMN10H220LE-13 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN10H220LE-13 | Single FETs, MOSFETs | 100V 2.3A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 6.2A, Sot-223 Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||
| PD | 1800 milliwatts | 1800 milliwatts | 1.8 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; SOT-223 | SOT223; TO-261-4, TO-261AA | Tape & Reel (TR) | SOT223; TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-3; SOT223 |
