DIODES Incorporated FET, MOSFET Arrays DMG6898LSD-13

Mosfet Array 2 N-Channel (Dual) 20V 9.5A 1.28W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 20V 9.5A 1.28W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 20V 9.5A 1.28W Surface Mount 8-SO

MOSFET 2N-CH 20V 9.5A 8SO Product overview: DMG6898LSD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 9.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 9.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMG6898LSD-13 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 131727-DMG6898LSD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMG6898LSD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.28W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9.5A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 1149pF @ 10V
Maximum Rds On at Id,Vgs: 16 mOhm @ 9.4A, 4.5V
Alternative Parts (Cross-Reference): DMG6898LSDQ-13; FDS6892AZ; FDS6812A-NL; SSM6N20;
Introduction Date: June 10, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited