Manufacturer: Diodes Incorporated
Win Source Part Number: 110392-DMG4932LSD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.19W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.5A
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1932pF @ 15V
Maximum Rds On at Id,Vgs: 15 mOhm @ 9A, 10V
Alternative Parts (Cross-Reference): SI4830CDY-T1-E3; IRF7904PBF; AO4916;
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
Mosfet Array 2 N-Channel (Dual) 30V 9.5A 1.19W Surface Mount 8-SO
MOSFET 2N-CH 30V 9.5A 8SO
MOSFET 2N-CH 30V 9.5A 8SO
| Win Source Electronics | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 110392-DMG4932LSD-13 | DMG4932LSD-13DITR-ND | 233-DMG4932LSD-13 | DMG4932LSD-13 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG4932LSD-13 | FET, MOSFET Arrays | MOSFET 2N-CH 30V 9.5A 8SO | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | ||
| PD | 1190 milliwatts | 1190 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" |
