DIODES Incorporated FET, MOSFET Arrays DMG1026UV-7

Description
Mosfet Array 2 N-Channel (Dual) 60V 410mA 580mW Surface Mount SOT-563
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 60V 410mA 580mW Surface Mount SOT-563
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - DMG1026UV-7DITR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG1026UV-7DITR-ND
FET, MOSFET Arrays DMG1026UV-7DITR-ND
Mosfet Array 2 N-Channel (Dual) 60V 410mA 580mW Surface Mount SOT-563

Mosfet Array 2 N-Channel (Dual) 60V 410mA 580mW Surface Mount SOT-563

Buy Now Datasheet
FET, MOSFET Arrays - DMG1026UV-7DICT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG1026UV-7DICT-ND
FET, MOSFET Arrays DMG1026UV-7DICT-ND
Mosfet Array 2 N-Channel (Dual) 60V 410mA 580mW Surface Mount SOT-563

Mosfet Array 2 N-Channel (Dual) 60V 410mA 580mW Surface Mount SOT-563

Buy Now Datasheet
FET, MOSFET Arrays - DMG1026UV-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMG1026UV-7DIDKR-ND
FET, MOSFET Arrays DMG1026UV-7DIDKR-ND
Mosfet Array 2 N-Channel (Dual) 60V 410mA 580mW Surface Mount SOT-563

Mosfet Array 2 N-Channel (Dual) 60V 410mA 580mW Surface Mount SOT-563

Buy Now Datasheet
FET, MOSFET Arrays - DMG1026UV-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMG1026UV-7
FET, MOSFET Arrays DMG1026UV-7
MOSFET 2N-CH 60V 0.41A SOT-563

MOSFET 2N-CH 60V 0.41A SOT-563

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1026UV-7 - 080563-DMG1026UV-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1026UV-7
080563-DMG1026UV-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1026UV-7 080563-DMG1026UV-7
Manufacturer: Diodes Incorporated Win Source Part Number: 080563-DMG1026UV-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 580mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 410mA Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 0.45nC @ 10V Max Input Capacitance: 32pF @ 25V Maximum Rds On at Id,Vgs: 1.8 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 080563-DMG1026UV-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 580mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 410mA
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 0.45nC @ 10V
Max Input Capacitance: 32pF @ 25V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K

MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMG1026UV-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMG1026UV-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMG1026UV-7
MOSFET 2N-CH 60V 0.41A SOT563

MOSFET 2N-CH 60V 0.41A SOT563

Supplier's Site
Mosfet, Dual N-Ch, 60V, 0.41A, Sot563; Transistor Polarity Diodes Inc. - 07AH3737 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 60V, 0.41A, Sot563; Transistor Polarity Diodes Inc.
07AH3737
Mosfet, Dual N-Ch, 60V, 0.41A, Sot563; Transistor Polarity Diodes Inc. 07AH3737
MOSFET, DUAL N-CH, 60V, 0.41A, SOT563; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:410mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; PowerRoHS Compliant: Yes

MOSFET, DUAL N-CH, 60V, 0.41A, SOT563; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:410mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; PowerRoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number DMG1026UV-7DITR-ND DMG1026UV-7 080563-DMG1026UV-7 DMG1026UV-7 DMG1026UV-7 07AH3737
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1026UV-7 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual N-Ch, 60V, 0.41A, Sot563; Transistor Polarity Diodes Inc.
Package Type SOT-563, SOT-666 SOT-563, SOT-666 SOT3; SOT-563 TO-3
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 410 milliamps 410 milliamps
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