MOSFET 2N-CH 60V 0.41A SOT-563
Mosfet Array 2 N-Channel (Dual) 60V 410mA 580mW Surface Mount SOT-563
Mosfet Array 2 N-Channel (Dual) 60V 410mA 580mW Surface Mount SOT-563
Mosfet Array 2 N-Channel (Dual) 60V 410mA 580mW Surface Mount SOT-563
Manufacturer: Diodes Incorporated
Win Source Part Number: 080563-DMG1026UV-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 580mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 410mA
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 0.45nC @ 10V
Max Input Capacitance: 32pF @ 25V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 60V 0.41A SOT563
MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K
MOSFET, DUAL N-CH, 60V, 0.41A, SOT563; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:410mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; PowerRoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMG1026UV-7 | DMG1026UV-7DITR-ND | 080563-DMG1026UV-7 | DMG1026UV-7 | DMG1026UV-7 | 07AH3737 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMG1026UV-7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual N-Ch, 60V, 0.41A, Sot563; Transistor Polarity Diodes Inc. |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| IDSS | 410 milliamps | 410 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
