DIODES Incorporated 50V 0.1A Bipolar Transistor DDTC123JLP-7

TRANS PREBIAS NPN 50V 0.1A 3DFN Product overview: DDTC123JLP-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DDTC123JLP-7 can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT)

TRANS PREBIAS NPN 50V 0.1A 3DFN

TRANS PREBIAS NPN 50V 0.1A 3DFN

Manufacturer: Diodes Incorporated
Win Source Part Number: 013953-DDTC123JLP-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Family Name: DDTC123JLP
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: 3-DFN1006 (1.0x0.6)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 180 @ 50mA, 5V
Maximum Power Dissipation: 250mW
Alternative Parts (Cross-Reference): BCR108L3E6327XT; BCR 108L3 E6327; BCR108L3;
Introduction Date: January 26, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient