DIODES Incorporated Single FETs, MOSFETs BSS123K-13

The BSS123K is an N-channel enhancement mode MOSFET in an SOT23 package, designed for high-efficiency power management and switching applications. It features a drain-source voltage rating of 100 V, a continuous drain current of 230 mA at 25°C, and on-state resistance of 6 Ω at VGS = 10 V or 10 Ω at VGS = 4.5 V. The device has a gate threshold voltage range of 0.8 to 2.0 V, input capacitance of 38 pF, and is ESD protected. It is RoHS compliant, halogen- and antimony-free, and meets UL 94V-0 flammability rating. Thermal resistance junction-to-ambient is 264 °C/W on a standard PCB or 178 °C/W with a 1-inch square copper plate. Operating temperature ranges from -55°C to +150°C. The BSS123K-13 variant is packaged in tape and reel for 10,000 units.