DIODES Incorporated Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules BAT54STQ-7-F

Description
Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >IGBTs>IGBT Modules Part Status: Obsolete Diode Configuration: 2 Independent Technology: Schottky Current - Average Rectified (Io) (per Diode): 100mA Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V Operating Temperature - Junction: -55°C ~ 100°C Package / Case: 8-SMD, No Lead Supplier Device Package: 529-MAPBGA (19x19)
Request a Quote Datasheet
Description
Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >IGBTs>IGBT Modules Part Status: Obsolete Diode Configuration: 2 Independent Technology: Schottky Current - Average Rectified (Io) (per Diode): 100mA Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V Operating Temperature - Junction: -55°C ~ 100°C Package / Case: 8-SMD, No Lead Supplier Device Package: 529-MAPBGA (19x19)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >IGBTs>IGBT Modules Part Status: Obsolete Diode Configuration: 2 Independent Technology: Schottky Current - Average Rectified (Io) (per Diode): 100mA Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V Operating Temperature - Junction: -55°C ~ 100°C Package / Case: 8-SMD, No Lead Supplier Device Package: 529-MAPBGA (19x19)

Manufacturer: AMIS
Category: Discrete Semiconductor Products>Transistors>IGBTs>IGBT Modules
Part Status: Obsolete
Diode Configuration: 2 Independent
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Operating Temperature - Junction: -55°C ~ 100°C
Package / Case: 8-SMD, No Lead
Supplier Device Package: 529-MAPBGA (19x19)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Name Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Package Type SOT3
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1826915 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type SOT323; Sot-323
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R090M1H - AIMDQ75R090M1H - Infineon Technologies AG
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
Fuji Electric Corp. of America
Specs
Transistor Type Bipolar RF
View Details