200 mA surface mount Schottky barrier diode in SOT523 package, featuring a maximum reverse voltage of 30 V, forward voltage drop of 1 V at 200 mA, and reverse leakage current of 2 µA at 25 V. The device includes a PN junction guard ring for ESD protection, is RoHS compliant, and is AEC-Q101 qualified for automotive applications. Package is SOT523 with dimensions of 1.60 mm x 0.80 mm, molded in UL 94 V-0 rated plastic, and meets J-STD-020 Level 1 moisture sensitivity. Thermal resistance is 490 °C/W and operating temperature ranges from -65 °C to +150 °C.
Manufacturer: AMIS
Category: Discrete Semiconductor Products>Transistors
Part Status: Obsolete
Diode Configuration: 2 Independent
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Operating Temperature - Junction: -55°C ~ 100°C
Package / Case: 8-SMD, No Lead
Supplier Device Package: 529-MAPBGA (19x19)
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules |
| Package Type | SOT3 |
