DIODES Incorporated Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules BAT54STQ-7-F

Description
Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >IGBTs>IGBT Modules Part Status: Obsolete Diode Configuration: 2 Independent Technology: Schottky Current - Average Rectified (Io) (per Diode): 100mA Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V Operating Temperature - Junction: -55°C ~ 100°C Package / Case: 8-SMD, No Lead Supplier Device Package: 529-MAPBGA (19x19)
Request a Quote Datasheet
Description
Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >IGBTs>IGBT Modules Part Status: Obsolete Diode Configuration: 2 Independent Technology: Schottky Current - Average Rectified (Io) (per Diode): 100mA Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V Operating Temperature - Junction: -55°C ~ 100°C Package / Case: 8-SMD, No Lead Supplier Device Package: 529-MAPBGA (19x19)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >IGBTs>IGBT Modules Part Status: Obsolete Diode Configuration: 2 Independent Technology: Schottky Current - Average Rectified (Io) (per Diode): 100mA Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V Operating Temperature - Junction: -55°C ~ 100°C Package / Case: 8-SMD, No Lead Supplier Device Package: 529-MAPBGA (19x19)

Manufacturer: AMIS
Category: Discrete Semiconductor Products>Transistors>IGBTs>IGBT Modules
Part Status: Obsolete
Diode Configuration: 2 Independent
Technology: Schottky
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Operating Temperature - Junction: -55°C ~ 100°C
Package / Case: 8-SMD, No Lead
Supplier Device Package: 529-MAPBGA (19x19)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Name Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Package Type SOT3
Unlock Full Specs
to access all available technical data

Similar Products

Hard To Find - ADS1220IRVAT - 1141621-ADS1220IRVAT - Win Source Electronics
Specs
Package Type SOT3
View Details
IGBT - 60118495 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
MOSFETs - 1220591 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT23; Sot-23
View Details