D3 Semiconductor, LLC MOSFET D3S190N65B-U

Description
MOSFET 190 mOhm 650V Superjunction Power MOSFET in TO-220
Description
MOSFET 190 mOhm 650V Superjunction Power MOSFET in TO-220
Datasheet
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D3S190N65B-U is a 650V Super Junction Power MOSFET in TO-220 package, designed for high-efficiency power conversion applications such as server power supplies, motor control, and PFC circuits. It features a maximum on-resistance of 190 mΩ, a continuous drain current of 21.6 A at 25°C, and a gate charge of 28 nC. The device supports an avalanche energy of 399 mJ and operates within a junction temperature range of -55°C to 150°C. Thermal resistance from junction to case is 0.75°C/W.

Datasheet Summary
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D3S190N65B-U is a 650V Super Junction Power MOSFET in TO-220 package, designed for high-efficiency power conversion applications such as server power supplies, motor control, and PFC circuits. It features a maximum on-resistance of 190 mΩ, a continuous drain current of 21.6 A at 25°C, and a gate charge of 28 nC. The device supports an avalanche energy of 399 mJ and operates within a junction temperature range of -55°C to 150°C. Thermal resistance from junction to case is 0.75°C/W.

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Sheung Wan, Hong Kong
MOSFET 190 mOhm 650V Superjunction Power MOSFET in TO-220

MOSFET 190 mOhm 650V Superjunction Power MOSFET in TO-220

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number D3S190N65B-U
Product Name MOSFET
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