D3 Semiconductor, LLC MOSFET D3S099N65E-T

The D3S099N65E-T is a 650V, 99mΩ Super Junction Power MOSFET in a TO-263 package, designed for high-efficiency power conversion applications such as server power supplies, motor control, and power factor correction. It has a continuous drain current of 33.6A at 25°C and an avalanche energy rating of 534mJ for single-pulse conditions. The device features low gate charge (56nC typ), low output capacitance (72pF), and operates within a junction temperature range of -55°C to 150°C. The TO-263 package has a maximum thermal resistance from junction to case of 2.25°C/W and a junction-to-ambient thermal resistance of 46°C/W for leaded configurations. It meets the JESD-22 reliability test standard and complies with RoHS requirements.