Texas Instruments CSD19535KCS 100V, N-Channel NexFET™ Power MOSFET CSD19535KCS

Description
100V, N-Channel NexFET™ Power MOSFET 3-TO-220 -55 to 175
Request a Quote Datasheet
Description
100V, N-Channel NexFET™ Power MOSFET 3-TO-220 -55 to 175
Request a Quote Datasheet

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Company
Product
Description
Supplier Links
CSD19535KCS 100V, N-Channel NexFET™ Power MOSFET - CSD19535KCS - Texas Instruments
Dallas, TX, United States
CSD19535KCS 100V, N-Channel NexFET™ Power MOSFET
CSD19535KCS
CSD19535KCS 100V, N-Channel NexFET™ Power MOSFET CSD19535KCS
100V, N-Channel NexFET™ Power MOSFET 3-TO-220 -55 to 175

100V, N-Channel NexFET™ Power MOSFET 3-TO-220 -55 to 175

Buy Now Datasheet
Single FETs, MOSFETs - CSD19535KCS - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
CSD19535KCS
Single FETs, MOSFETs CSD19535KCS
MOSFET N-CH 100V 150A TO220-3

MOSFET N-CH 100V 150A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - 296-37288-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-37288-5-ND
Single FETs, MOSFETs 296-37288-5-ND
N-Channel 100V 150A (Ta) 300W (Tc) Through Hole TO-220-3

N-Channel 100V 150A (Ta) 300W (Tc) Through Hole TO-220-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19535KCS - 1163538-CSD19535KCS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19535KCS
1163538-CSD19535KCS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19535KCS 1163538-CSD19535KCS
Manufacturer: Texas Instruments Win Source Part Number: 1163538-CSD19535KCS Series: NexFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Family Name: CSD19535KCS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Manufacturer Homepage: www.ti.com Manufacturer Package: TO-220-3 Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 3.4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 101nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 7930pF @ 50V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 3.6 mOhm @ 100A, 10V Alternative Parts (Cross-Reference): SQP120N10-3m8_GE3; IPP120N10S403AKSA1; IPP120N10S405AKSA1; Introduction Date: January 25, 2014 Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Texas Instruments
Win Source Part Number: 1163538-CSD19535KCS
Series: NexFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Family Name: CSD19535KCS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Homepage: www.ti.com
Manufacturer Package: TO-220-3
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 3.4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 101nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 7930pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.6 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): SQP120N10-3m8_GE3; IPP120N10S403AKSA1; IPP120N10S405AKSA1;
Introduction Date: January 25, 2014
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Mosfet, N Channel, 100V, 150A, To-220-3; Transistor Polarity Texas Instruments - 26AJ5580 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 150A, To-220-3; Transistor Polarity Texas Instruments
26AJ5580
Mosfet, N Channel, 100V, 150A, To-220-3; Transistor Polarity Texas Instruments 26AJ5580
MOSFET, N CHANNEL, 100V, 150A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; PowerRoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 150A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; PowerRoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V N-CH NexFET Pwr MOSFET

MOSFET 100V N-CH NexFET Pwr MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD19535KCS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD19535KCS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD19535KCS
MOSFET N-CH 100V 150A TO220-3

MOSFET N-CH 100V 150A TO220-3

Supplier's Site

Technical Specifications

  Texas Instruments ODG (Origin Data Global) DigiKey Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number CSD19535KCS CSD19535KCS 296-37288-5-ND 1163538-CSD19535KCS 26AJ5580 CSD19535KCS CSD19535KCS
Product Name CSD19535KCS 100V, N-Channel NexFET™ Power MOSFET Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19535KCS Mosfet, N Channel, 100V, 150A, To-220-3; Transistor Polarity Texas Instruments MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
IDSS 181000 milliamps 150000 milliamps 150000 milliamps
QG 78 nC 101 nC
Package Type TO-220 TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3 TO-3; TO-220 TO-220; TO-220-3
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