Cypress Semiconductor Corp. Memory S34MS01G200BHI903

Description
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)
Datasheet
Description
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34MS01G200BHI903 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number S34MS01G200BHI903
Product Name Memory
Memory Category Flash; FLASH
Access Time 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-8961413QXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 70 ns
Density 1000 kbits
View Details
Flash Memory - 1882874 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memories - NOR flash - Serial NOR flash - Quad SPI Flash - S25FL064LABNFV040 - S25FL064LABNFV040 - Infineon Technologies AG
Specs
Memory Category Flash
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 64000 kbits
View Details
6 suppliers