Cypress Semiconductor Corp. Memory S34MS01G200BHI903

Description
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)
Datasheet
Description
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34MS01G200BHI903 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number S34MS01G200BHI903
Product Name Memory
Memory Category Flash; FLASH
Access Time 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882517 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Logic - Logic - FIFOs Memory - SN74ACT7801-15FN - 794886-SN74ACT7801-15FN - Win Source Electronics
Specs
Memory Category FIFO
Data Rate 40 MHz
Access Time 15 ns
View Details
3 suppliers
Memory - AS5SS256K18 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2048 kbits
View Details
Memory - 16-1004144-01-T - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers