Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory CY7C1370S-200BZI

Description
IC SRAM 18MBIT 200MHZ 165FBGA
Request a Quote Datasheet
Description
IC SRAM 18MBIT 200MHZ 165FBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - CY7C1370S-200BZI - Rochester Electronics
Newburyport, MA, United States
IC SRAM 18MBIT 200MHZ 165FBGA

IC SRAM 18MBIT 200MHZ 165FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - CY7C1370S-200BZI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CY7C1370S-200BZI
Integrated Circuits (ICs) - Memory - Memory CY7C1370S-200BZI
IC SRAM 18MBIT PARALLEL 165FBGA

IC SRAM 18MBIT PARALLEL 165FBGA

Supplier's Site

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number CY7C1370S-200BZI CY7C1370S-200BZI
Product Name Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS27C010A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EPROM; UVEPROM
Access Time 41263 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Controllers - BQ2201SN-NG4 - Quarktwin Technology Ltd.
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 8-SOIC (0.154\", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Memory - 71256SA15YI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 256 kbits
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F1120101VXA - 5962F1120101VXA - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 72000 kbits
Number of Words 2 k
View Details