Wolfspeed High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz GTVA261802FC-V1

Description
The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Typical Pulsed CW performance, combined outputs, 2690 MHz, 48 V, 10 μs pulse width, 10% duty cycle Output power at P3dB = 170 W Drain Efficiency @ P3dB = 65.5% Gain @ P3dB = 15 dB Capable of handling 10:1 VSWR @ 48 V, 180 W (CW) output power Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Pb-free and RoHS-compliant
  • High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz - GTVA261802FC-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Typical Pulsed CW performance, combined outputs, 2690 MHz, 48 V, 10 μs pulse width, 10% duty cycle Output power at P3dB = 170 W Drain Efficiency @ P3dB = 65.5% Gain @ P3dB = 15 dB Capable of handling 10:1 VSWR @ 48 V, 180 W (CW) output power Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Pb-free and RoHS-compliant
Datasheet

Suppliers

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High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz - GTVA261802FC-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz
GTVA261802FC-V1
High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz GTVA261802FC-V1
The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input matched Typical Pulsed CW performance, combined outputs, 2690 MHz, 48 V, 10 μs pulse width, 10% duty cycle Output power at P3dB = 170 W Drain Efficiency @ P3dB = 65.5% Gain @ P3dB = 15 dB Capable of handling 10:1 VSWR @ 48 V, 180 W (CW) output power Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Pb-free and RoHS-compliant

The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical Pulsed CW performance, combined outputs, 2690 MHz, 48 V, 10 μs pulse width, 10% duty cycle
    • Output power at P3dB = 170 W
    • Drain Efficiency @ P3dB = 65.5%
    • Gain @ P3dB = 15 dB
  • Capable of handling 10:1 VSWR @ 48 V, 180 W (CW) output power
  • Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS-compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number GTVA261802FC-V1
Product Name High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz
Transistor Technology / Material GaN
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