The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Features
GaN on SiC HEMT technology
Input matched
Typical Pulsed CW performance, combined outputs, 2690 MHz, 48 V, 10 μs pulse width, 10% duty cycle
Output power at P3dB = 170 W
Drain Efficiency @ P3dB = 65.5%
Gain @ P3dB = 15 dB
Capable of handling 10:1 VSWR @ 48 V, 180 W (CW) output power
Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
Low thermal resistance
Pb-free and RoHS-compliant
The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Features
- GaN on SiC HEMT technology
- Input matched
- Typical Pulsed CW performance, combined outputs, 2690 MHz, 48 V, 10 μs pulse width, 10% duty cycle
- Output power at P3dB = 170 W
- Drain Efficiency @ P3dB = 65.5%
- Gain @ P3dB = 15 dB
- Capable of handling 10:1 VSWR @ 48 V, 180 W (CW) output power
- Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS-compliant
