Wolfspeed High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz GTRA364002FC-V1

Description
The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input Matched Asymmetrical Doherty design Main: P3dB = 170 W Typ Peak: P3dB = 230 W Typ Typical Pulsed CW performance, 3400 to 3600 MHz, 48 V, combined outputs, Doherty @ P3dB, 10 μs, 10% duty cycle Output power = 400 W Efficiency = 60 % Gain = 14 dB Capable of handling 10:1 VSWR @ 48 V, 50 W (WCDMA) output power Low thermal resistance Pb-free and RoHS compliant
  • High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz - GTRA364002FC-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input Matched Asymmetrical Doherty design Main: P3dB = 170 W Typ Peak: P3dB = 230 W Typ Typical Pulsed CW performance, 3400 to 3600 MHz, 48 V, combined outputs, Doherty @ P3dB, 10 μs, 10% duty cycle Output power = 400 W Efficiency = 60 % Gain = 14 dB Capable of handling 10:1 VSWR @ 48 V, 50 W (WCDMA) output power Low thermal resistance Pb-free and RoHS compliant
Datasheet

Suppliers

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High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz - GTRA364002FC-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz
GTRA364002FC-V1
High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz GTRA364002FC-V1
The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features GaN on SiC HEMT technology Input Matched Asymmetrical Doherty design Main: P3dB = 170 W Typ Peak: P3dB = 230 W Typ Typical Pulsed CW performance, 3400 to 3600 MHz, 48 V, combined outputs, Doherty @ P3dB, 10 μs, 10% duty cycle Output power = 400 W Efficiency = 60 % Gain = 14 dB Capable of handling 10:1 VSWR @ 48 V, 50 W (WCDMA) output power Low thermal resistance Pb-free and RoHS compliant

The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Input Matched
  • Asymmetrical Doherty design
    • Main: P3dB = 170 W Typ
    • Peak: P3dB = 230 W Typ
  • Typical Pulsed CW performance, 3400 to 3600 MHz, 48 V, combined outputs, Doherty @ P3dB, 10 μs, 10% duty cycle
    • Output power = 400 W
    • Efficiency = 60 %
    • Gain = 14 dB
  • Capable of handling 10:1 VSWR @ 48 V, 50 W (WCDMA) output power
  • Low thermal resistance
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number GTRA364002FC-V1
Product Name High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz
Transistor Technology / Material GaN
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