E4MS045075J2-TR is an automotive-grade silicon carbide power MOSFET in a TO-263-7 XL package, rated for 750 V drain-source voltage and continuous drain current of 34 A at 100 °C case temperature. It features a drain-source on-state resistance of 66.2 mΩ at 175 °C junction temperature and 54.9 mΩ at 15 V gate-source voltage. The device meets AEC-Q101 qualification and is RoHS compliant, with a thermal resistance from junction to case of 0.68 to 0.88 °C/W, enabling high efficiency and power density in applications such as onboard chargers and battery management systems.
45M, 750V, TO-263-7 XL SIC MOSFE
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1697-E4MS045075J2-TR-ND |
| Product Name | Single FETs, MOSFETs |