Wolfspeed Single FETs, MOSFETs E4M0013120K

The E4M0013120K is a silicon carbide N-channel enhancement mode MOSFET designed for automotive applications, featuring a TO-247-4L package with 8mm creepage distance between drain and source. It has a maximum drain-source voltage of 1200V, continuous drain current of 153A at 25°C case temperature, and a thermal resistance from junction to case of 0.22 to 0.29°C/W. The device supports gate-source voltage up to +19V/-8V and meets AEC-Q101 automotive qualification standards with RoHS compliance. It enables high-speed switching with low capacitances and features a fast intrinsic diode with low reverse recovery charge.