Qorvo's TGF2956 is a discrete 10.08 mm GaN on SiC HEMT which operates from DC-12 GHz.
The TGF2956 typically provides 47.6 dBm of saturated output power with power gain of 19.3 dB at 3 GHz. The maximum power added efficiency is 69.7 % which makes the TGF2956 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
| Qorvo | |
|---|---|
| Product Category | RF Transistors |
| Product Number | TGF2956 |
| Product Name | DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT |
| Transistor Technology / Material | GaN on SiC |
