Wolfspeed 30-W, 2.7 to 3.5-GHz, 50-V, GaN MMIC Power Amplifier, Bare Die CMPA2735030D

Description
Wolfspeed’s CMPA2735030D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
  • 30-W, 2.7 to 3.5-GHz, 50-V, GaN MMIC Power Amplifier, Bare Die - CMPA2735030D - Wolfspeed
    Wolfspeed
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Description
Wolfspeed’s CMPA2735030D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
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30-W, 2.7 to 3.5-GHz, 50-V, GaN MMIC Power Amplifier, Bare Die - CMPA2735030D - Wolfspeed
Wolfspeed
Durham, NC, United States
30-W, 2.7 to 3.5-GHz, 50-V, GaN MMIC Power Amplifier, Bare Die
CMPA2735030D
30-W, 2.7 to 3.5-GHz, 50-V, GaN MMIC Power Amplifier, Bare Die CMPA2735030D
Wolfspeed’s CMPA2735030D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Wolfspeed’s CMPA2735030D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

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Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number CMPA2735030D
Product Name 30-W, 2.7 to 3.5-GHz, 50-V, GaN MMIC Power Amplifier, Bare Die
Transistor Technology / Material GaN
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