Wolfspeed 35-W, 2000 – 6000-MHz, 28V, GaN MMIC Power Amplifier CMPA2060035F

Description
Wolfspeed's CMPA2060035F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier, enabling very wide bandwidths to be achieved in a small-footprint, screw-down package featuring a copper-tungsten heat sink.
  • 35-W, 2000 – 6000-MHz, 28V, GaN MMIC Power Amplifier - CMPA2060035F - Wolfspeed
    Wolfspeed
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Description
Wolfspeed's CMPA2060035F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier, enabling very wide bandwidths to be achieved in a small-footprint, screw-down package featuring a copper-tungsten heat sink.
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35-W, 2000 – 6000-MHz, 28V, GaN MMIC Power Amplifier - CMPA2060035F - Wolfspeed
Wolfspeed
Durham, NC, United States
35-W, 2000 – 6000-MHz, 28V, GaN MMIC Power Amplifier
CMPA2060035F
35-W, 2000 – 6000-MHz, 28V, GaN MMIC Power Amplifier CMPA2060035F
Wolfspeed's CMPA2060035F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier, enabling very wide bandwidths to be achieved in a small-footprint, screw-down package featuring a copper-tungsten heat sink.

Wolfspeed's CMPA2060035F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier, enabling very wide bandwidths to be achieved in a small-footprint, screw-down package featuring a copper-tungsten heat sink.

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Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number CMPA2060035F
Product Name 35-W, 2000 – 6000-MHz, 28V, GaN MMIC Power Amplifier
Transistor Technology / Material GaN
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