Wolfspeed 200-W, 4400 - 5000-MHz, 50-Ohm Input/Output-Matched, GaN HEMT CGHV50200F

Description
Wolfspeed’s CGHV50200F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0-GHz C-Band SatCom applications and beyond line of sight. The transistor is supplied in a ceramic/metal flange package, type 440215.
Datasheet
Description
Wolfspeed’s CGHV50200F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0-GHz C-Band SatCom applications and beyond line of sight. The transistor is supplied in a ceramic/metal flange package, type 440215.
Datasheet

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200-W, 4400 - 5000-MHz, 50-Ohm Input/Output-Matched, GaN HEMT - CGHV50200F - Wolfspeed
Durham, NC, United States
200-W, 4400 - 5000-MHz, 50-Ohm Input/Output-Matched, GaN HEMT
CGHV50200F
200-W, 4400 - 5000-MHz, 50-Ohm Input/Output-Matched, GaN HEMT CGHV50200F
Wolfspeed’s CGHV50200F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0-GHz C-Band SatCom applications and beyond line of sight. The transistor is supplied in a ceramic/metal flange package, type 440215.

Wolfspeed’s CGHV50200F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0-GHz C-Band SatCom applications and beyond line of sight. The transistor is supplied in a ceramic/metal flange package, type 440215.

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Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number CGHV50200F
Product Name 200-W, 4400 - 5000-MHz, 50-Ohm Input/Output-Matched, GaN HEMT
Transistor Technology / Material GaN
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