Wolfspeed 120-W, 3100 – 3500-MHz, 50 V, GaN HEMT for S-Band Radar Systems CGHV35120F

Description
Wolfspeed's CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CGHV35120F ideal for 3.1 - 3.5 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Datasheet
Description
Wolfspeed's CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CGHV35120F ideal for 3.1 - 3.5 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
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120-W, 3100 – 3500-MHz, 50 V, GaN HEMT for S-Band Radar Systems - CGHV35120F - Wolfspeed
Durham, NC, United States
120-W, 3100 – 3500-MHz, 50 V, GaN HEMT for S-Band Radar Systems
CGHV35120F
120-W, 3100 – 3500-MHz, 50 V, GaN HEMT for S-Band Radar Systems CGHV35120F
Wolfspeed's CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CGHV35120F ideal for 3.1 - 3.5 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Wolfspeed's CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CGHV35120F ideal for 3.1 - 3.5 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.

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Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number CGHV35120F
Product Name 120-W, 3100 – 3500-MHz, 50 V, GaN HEMT for S-Band Radar Systems
Transistor Technology / Material GaN
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