Wolfspeed’s CGHV1J070D is a high-voltage gallium-nitride (GaN) high electron mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
Features
| Wolfspeed | |
|---|---|
| Product Category | RF Transistors |
| Product Number | CGHV1J070D |
| Product Name | 70-W, 18.0-GHz, GaN HEMT Die |
| Transistor Technology / Material | GaN |
