Wolfspeed 70-W, 18.0-GHz, GaN HEMT Die CGHV1J070D

Description
Wolfspeed’s CGHV1J070D is a high-voltage gallium-nitride (GaN) high electron mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. Features Up to 18 GHz Operation
Datasheet
Description
Wolfspeed’s CGHV1J070D is a high-voltage gallium-nitride (GaN) high electron mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. Features Up to 18 GHz Operation
Datasheet

Suppliers

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70-W, 18.0-GHz, GaN HEMT Die - CGHV1J070D - Wolfspeed
Durham, NC, United States
70-W, 18.0-GHz, GaN HEMT Die
CGHV1J070D
70-W, 18.0-GHz, GaN HEMT Die CGHV1J070D
Wolfspeed’s CGHV1J070D is a high-voltage gallium-nitride (GaN) high electron mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. Features Up to 18 GHz Operation

Wolfspeed’s CGHV1J070D is a high-voltage gallium-nitride (GaN) high electron mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.

Features

  • Up to 18 GHz Operation
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number CGHV1J070D
Product Name 70-W, 18.0-GHz, GaN HEMT Die
Transistor Technology / Material GaN
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