Wolfspeed FET, MOSFET Arrays CCS050M12CM2

Description
MOSFET 6N-CH 1200V 87A MODULE
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Description
MOSFET 6N-CH 1200V 87A MODULE
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - CCS050M12CM2 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
CCS050M12CM2
FET, MOSFET Arrays CCS050M12CM2
MOSFET 6N-CH 1200V 87A MODULE

MOSFET 6N-CH 1200V 87A MODULE

Supplier's Site Datasheet
Mosfet Module, Six N-Ch, 1.2Kv, 87A; Mosfet Module Configuration Wolfspeed - 87W9137 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Module, Six N-Ch, 1.2Kv, 87A; Mosfet Module Configuration Wolfspeed
87W9137
Mosfet Module, Six N-Ch, 1.2Kv, 87A; Mosfet Module Configuration Wolfspeed 87W9137
MOSFET MODULE, SIX N-CH, 1.2KV, 87A; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:87A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.3V RoHS Compliant: Yes

MOSFET MODULE, SIX N-CH, 1.2KV, 87A; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:87A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.3V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CCS050M12CM2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CCS050M12CM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CCS050M12CM2
MOSFET 6N-CH 1200V 87A MODULE

MOSFET 6N-CH 1200V 87A MODULE

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number CCS050M12CM2 87W9137 CCS050M12CM2
Product Name FET, MOSFET Arrays Mosfet Module, Six N-Ch, 1.2Kv, 87A; Mosfet Module Configuration Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 6 N-Channel (3-Phase Bridge)
Transistor Technology / Material Silicon Carbide (SiC)
V(BR)DSS 1200 volts
IDSS 87000 milliamps 87000 milliamps
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