Wolfspeed Single FETs, MOSFETs C3M0120065J

N-Channel 650V 21A (Tc) 86W (Tc) Surface Mount TO-263-7

Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M^TM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density.

Features

• 3rd Generation (C3M^TM) SiC MOSFET Technology
• Superior overall system level efficiency
• High frequency operation
• Robust body diode with low reverse recovery charge
• Kelvin Source connection to reduce parasitic inductance and switching losses
• Industry standard packages that meet creepage and clearance requirements

Figures of Merit

• Low on-state resistance over temperature
• Low parasitic capacitances
• Robust and fast body diode with ultra-low reverse-recovery charge (Qrr)
• Wide range of operation junction temperature

Target Applications

• Server Power Supplies
• EV Charging Systems
• Energy Storage Systems (UPS)
• Solar (PV) Inverters

650V 120M SIC MOSFET Product overview: C3M0120065J from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0120065J can be used for catalog matching and distributor lookup.