Wolfspeed Silicon Carbide MOSFETs C3M0040120U2-TR

Description
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
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Description
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
Request a Quote
Datasheet
Datasheet Summary
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The C3M0040120U2 is a 1200V, 40mΩ N-channel enhancement mode silicon carbide power MOSFET in a Top Side Cooled (TSC) package, designed for high-efficiency switching applications such as EV chargers, solar/ESS systems, and industrial power supplies. The device measures 14.12 mm by 11.75 mm, with a 10-terminal layout featuring a separate driver source pin to minimize gate ringing. It supports a continuous drain current of 45 A at 100°C case temperature and handles a maximum power dissipation of 283 W at 25°C case temperature. The thermal resistance from junction to case is 0.41 to 0.53 °C/W. The gate-source operating voltage ranges from -4 V to 15 V, and the junction and storage temperature range is from -55°C to +175°C. The MOSFET is RoHS compliant and halogen free.

Datasheet Summary
Powered by GS/AI

The C3M0040120U2 is a 1200V, 40mΩ N-channel enhancement mode silicon carbide power MOSFET in a Top Side Cooled (TSC) package, designed for high-efficiency switching applications such as EV chargers, solar/ESS systems, and industrial power supplies. The device measures 14.12 mm by 11.75 mm, with a 10-terminal layout featuring a separate driver source pin to minimize gate ringing. It supports a continuous drain current of 45 A at 100°C case temperature and handles a maximum power dissipation of 283 W at 25°C case temperature. The thermal resistance from junction to case is 0.41 to 0.53 °C/W. The gate-source operating voltage ranges from -4 V to 15 V, and the junction and storage temperature range is from -55°C to +175°C. The MOSFET is RoHS compliant and halogen free.

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0040120U2-TR - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0040120U2-TR
Silicon Carbide MOSFETs C3M0040120U2-TR
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number C3M0040120U2-TR
Product Name Silicon Carbide MOSFETs
rDS(on) 0.0400 ohms
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