The C3M0032120U2 is a 1200V, 32mΩ N-channel enhancement mode silicon carbide power MOSFET in a top-side cooled (TSC) U2PAK package. It features a separate driver source pin for reduced gate ringing, low input and output capacitances, and a fast intrinsic body diode with low reverse recovery charge. The device supports continuous drain currents up to 53A at 100°C case temperature and dissipates up to 341W at 25°C case temperature. It operates from -55°C to +175°C junction temperature and meets RoHS compliance. Thermal resistance from junction to case is 0.34-0.44 °C/W. Switching energy is 295μJ turn-on and 52μJ turn-off under inductive load conditions. The package dimensions are defined by an industry-standard TSC footprint with a 1.27mm lead pitch.
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| Richardson RFPD | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0032120U2-TR |
| Product Name | Silicon Carbide MOSFETs |
| rDS(on) | 0.0320 ohms |
