Comchip Technology Corporation TRANSISTORS - Transistors (BJT) - Single - 2N3906-G 2N3906-G

Description
Manufacturer: Comchip Technology Win Source Part Number: 111223-2N3906-G Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 400mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 100mA, 1V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
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Description
Manufacturer: Comchip Technology Win Source Part Number: 111223-2N3906-G Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 400mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 100mA, 1V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

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TRANSISTORS - Transistors (BJT) - Single - 2N3906-G - 111223-2N3906-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3906-G
111223-2N3906-G
TRANSISTORS - Transistors (BJT) - Single - 2N3906-G 111223-2N3906-G
Manufacturer: Comchip Technology Win Source Part Number: 111223-2N3906-G Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 400mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 100mA, 1V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Comchip Technology
Win Source Part Number: 111223-2N3906-G
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 250MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 400mV @ 5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 30 @ 100mA, 1V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Single Bipolar Transistors - 641-1946-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
641-1946-ND
Single Bipolar Transistors 641-1946-ND
Bipolar (BJT) Transistor PNP 40V 200mA 250MHz Through Hole TO-92

Bipolar (BJT) Transistor PNP 40V 200mA 250MHz Through Hole TO-92

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3906-G
Bipolar Transistors - BJT 2N3906-G
Bipolar Transistors - BJT -40V -200mA TO-92

Bipolar Transistors - BJT -40V -200mA TO-92

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Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 111223-2N3906-G 641-1946-ND 2N3906-G
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N3906-G Single Bipolar Transistors Bipolar Transistors - BJT
Polarity PNP; PNP PNP
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