Central Semiconductor Corp. Single FETs, MOSFETs CWDM305N TR13 PBFREE

The CWDM305N is an N-channel enhancement-mode MOSFET in an SOIC-8 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 30 V, a continuous drain current of 5.8 A, and a maximum pulsed drain current of 23.2 A at 10 μs. The device exhibits a typical on-resistance of 0.030 Ω at VGS=10 V and ID=2.9 A, with a gate-source threshold voltage range of 1.0 to 3.0 V. Total gate charge is specified between 4.2 and 6.3 nC. The package measures 5.00 mm by 3.80 mm with a height of 1.554 mm. Operating and storage junction temperatures range from -55 to +150 °C. The device meets RoHS compliance as indicated by the PBFREE suffix in the part number.