Central Semiconductor Corp. Single Bipolar Transistors CP147-MJ11016-CT

The CP147-MJ11016 is a silicon NPN Darlington transistor die designed for high-current applications, with a collector-emitter voltage rating of 120 V and a continuous collector current of 30 A. The die measures 195 x 195 mils with a thickness of 11.4 mils. It operates from -65°C to +200°C and features a minimum current gain of 200 at 30 A and 5 V collector-emitter bias. The device has a saturated collector-emitter voltage of 4.0 V at 30 A and 300 mA base current. The CP147-MJ11016-CT variant is a singulated die in a waffle tray package, conforming to the CP147 series. The CP147 wafer process is discontinued and classified as End of Life, with CP247 as the designated replacement.