Central Semiconductor Corp. Bipolar Transistors - BJT CMST5088 TR

Description
Bipolar Transistors - BJT NPN 35Vcbo 30Vceo 4.5Vebo 50mA 275mW
Description
Bipolar Transistors - BJT NPN 35Vcbo 30Vceo 4.5Vebo 50mA 275mW
Datasheet
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The CMST5088 is an NPN silicon transistor in a SOT-323 surface mount package, designed for high gain and low noise applications. It has a collector-base voltage rating of 35 V, collector-emitter voltage of 30 V, emitter-base voltage of 4.5 V, continuous collector current of 50 mA, and power dissipation of 275 mW. The operating and storage junction temperature range is -65 to +150 °C with a thermal resistance of 455 °C/W. Current gain (hFE) ranges from 300 to 900 at IC=0.1 mA and VCE=5 V, and transition frequency is 50 MHz. Noise figure is up to 3.0 dB under specified conditions.

Datasheet Summary
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The CMST5088 is an NPN silicon transistor in a SOT-323 surface mount package, designed for high gain and low noise applications. It has a collector-base voltage rating of 35 V, collector-emitter voltage of 30 V, emitter-base voltage of 4.5 V, continuous collector current of 50 mA, and power dissipation of 275 mW. The operating and storage junction temperature range is -65 to +150 °C with a thermal resistance of 455 °C/W. Current gain (hFE) ranges from 300 to 900 at IC=0.1 mA and VCE=5 V, and transition frequency is 50 MHz. Noise figure is up to 3.0 dB under specified conditions.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMST5088 TR
Bipolar Transistors - BJT CMST5088 TR
Bipolar Transistors - BJT NPN 35Vcbo 30Vceo 4.5Vebo 50mA 275mW

Bipolar Transistors - BJT NPN 35Vcbo 30Vceo 4.5Vebo 50mA 275mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMST5088 TR
Product Name Bipolar Transistors - BJT
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